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input_file.m
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% Input file %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% first column is the material used from the "library"
% second column is the length of the layer in nm
% third column is the n doping volumique of that layer in 1E18 cm-3
% fourth column is the p doping volumique of that layer in 1E18 cm-3
% fifth column is the number of points (meshing) of that layer
% You have to put a resonable amount of doping! Otherwise, it will diverge!
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% substrate=InP;
%
% M=[
% AlInAs 40 1 0 20
% AlInAs 100 0 0 20
%
% AlInAs 20 0 0 20
% InGaAs30 30 0 0 20
% AlInAs 20 0 0 20
%
% AlInAs 100 0 0 20
% AlInAs 40 1 0 20
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left
% Fermi_layerbreak_R = 1; %% it chooses the layer number at which the Fermi level breaks on the right
% Nloops = 300; %% number of loops at which it stops
% tau0 = 100; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% substrate=InP;
%
% M=[
% AlInAs 40 0 10 50
% AlInAs 100 0 0 100
%
% AlInAs 20 0 0 10
% InGaAs30 30 0 0 10
% AlInAs 20 0 0 10
% InGaAs30 30 0 0 10
% AlInAs 20 0 0 10
% InGaAs30 30 0 0 10
% AlInAs 20 0 0 10
% InGaAs30 30 0 0 10
% AlInAs 20 0 0 10
%
% AlInAs 100 0 0 100
% AlInAs 40 20 0 50
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left
% Fermi_layerbreak_R = 1; %% it chooses the layer number at which the Fermi level breaks on the right
% Nloops = 500; %% number of loops at which it stops
% tau0 = 150; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% substrate=GaAs;
%
% M=[
% GaAs 40 1 0 20
% GaAs 40 0 0 20
%
% GaAs 20 0 0 20
% InGaAs30 30 0 0 120
% GaAs 20 0 0 20
%
% GaAs 40 0 0 20
% GaAs 40 1 0 20
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left
% Fermi_layerbreak_R = 6; %% it chooses the layer number at which the Fermi level breaks on the right
% Nloops = 150; %% number of loops at which it stops
% tau0 = 50; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% substrate=GaAs;
%
% M=[
% GaAs 40 0 1 20
% GaAs 40 0 0 20
%
% GaAs 20 0 0 20
% InGaAs30 30 0 0 120
% GaAs 20 0 0 20
% InGaAs30 30 0 0 120
% GaAs 20 0 0 20
% InGaAs30 30 0 0 120
% GaAs 20 0 0 20
%
% GaAs 40 0 0 20
% GaAs 40 1 0 20
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left
% Fermi_layerbreak_R = 6; %% it chooses the layer number at which the Fermi level breaks on the right
% Nloops = 150; %% number of loops at which it stops
% tau0 = 50; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% NP junction on Si
% substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
% M=[
% Si 40 1 0 30
% Si 30 0 1.3 50
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
% Fermi_layerbreak_R = 1; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
% Nloops = 150; %% number of loops at which it stops
% tau0 = 50; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% PN junction on Si
% substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
% M=[
% Si 50 0 1 30
% Si 100 0.2 0 50
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
% Fermi_layerbreak_R = 1; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
% Nloops = 50; %% number of loops at which it stops
% tau0 = 15; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% PIN junction on Si
% substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
% M=[
% Si 50 0 1 30
% Si 50 0 0 10
% Si 50 0.8 0 50
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
% Fermi_layerbreak_R = 2; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
% Nloops = 50; %% number of loops at which it stops
% tau0 = 15; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% NPN junction on Si
% substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
% M=[
% Si 50 1 0 20
% Si 200 0 0.5 60
% Si 150 0.2 0 50
% ];
%
% Fermi_layerbreak_L = 1; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
% Fermi_layerbreak_R = 2; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
% Nloops = 500; %% number of loops at which it stops
% tau0 = 150; %% Damping value
%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% 5V N-MOS with 12nm oxide gate
substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
M = [
Poly 3 50 0 3
Poly 2 50 0 15
Oxide 12 0 0 3
Si 0.5 0 0.2 15
Si 1.0 0 0.2 10
Si 2.5 0 0.2 5
Si 100 0 0.2 30
];
Fermi_layerbreak_L = 2; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
Fermi_layerbreak_R = 3; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
Nloops = 50; %% number of loops at which it stops
tau0 = 15; %% Damping value
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
% 1.8V P-MOS with 3.5nm oxide gate
% substrate=Si; % Important for the Strain model (Si, GaAs, InP, InAs, GaSb)
%
% M = [
% Poly 3 0 50 5
% Poly 2 0 50 5
% Oxide 3.5 0 0 3
% Si 0.5 0.5 0 15
% Si 1.0 0.5 0 10
% Si 2.5 0.5 0 5
% Si 70 0.5 0 30
% ];
%
% Fermi_layerbreak_L = 2; %% it chooses the layer number at which the Fermi level breaks on the left in case of applied voltage
% Fermi_layerbreak_R = 3; %% it chooses the layer number at which the Fermi level breaks on the right in case of applied voltage
% Nloops = 50; %% number of loops at which it stops
% tau0 = 15; %% Damping value