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carrier11.m
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carrier11.m
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function c1=carrier11(t, bias,c1,p1,p2)
q = 1.6e-10; %1.6e-19; %electron charge in A/ns
vg = 8.36e4; %8.36e9; %group velocity
d = 24; %24e-9; %thickness of active layer in cm
l = 1000; %1e-6; %length of cavity in VCSEL cm
ao = 3.5e-2; %3.5e-16; %differential gain in cm2
beta = 1; %1; %spontaneous emission rate
ntr = 1.33e-3; %1.33e18; %transparency carrier density
nsp = 2; %2; %inversion factor
gamma_1 = 0.63; %0.75; %confinement factor for mode 1
gamma_2 = 0.35 ; %0.35; %confinement factor for mode 2
ks = 8.6e-7; %8.6e-7; %gain compression coefficient
r1 = 4000; %4e-6; %radius of mode 1
r2 = 7500; %7.5e-6; %radius of mode 2
alpha = 1e-6; %1000; %material loss of the active layer
rf = 0.9991; %0.9991; %reflectivity of the front fece
rb = 0.9998; %0.9998; %reflectivity of the back face
taup1 = 2; %2e-12; %photon lifetime of mode 1
taup2 = 1.88; %1.88e-12; %photon lifetime of mode 2
taue = 3000; %3e-9; %carrier lifetime
eps11 =2e-7; %self-gain saturation coefficient mode 1
eps22 =2e-7; %self-gain saturation coefficient mode 2
eps12 =0.5e-7; %cross- gain saturation coefficient mode 1
eps21 =0.5e-7; %cross- gain saturation coefficient mode 2
v1=pi*(r1^2)*d;
v2=pi*(r2^2)*d;
g1l=(vg*(d/l)*ao*(c1-ntr)); % modal gain
% g2l=(vg*(d/l)*ao*(c2-ntr)); % modal gain
g1=((vg*(d/l)*ao*(c1-ntr))*(1-(p1*eps11)-(eps12*p2))*(1-ks*(gamma_1*p1+gamma_2*p2))); %linear modal gain
% g2=((vg*(d/l)*ao*(c2-ntr))*(1-ks*((p1*(1-gamma_1))+(p2*(1-gamma_2))))); %linear modal gain
c1=(bias/(v1*q)) - (c1/taue) - ((gamma_1*p1 + gamma_2*p2)*(g1/v1));
end